但是目前自对准的双栅MOSFET的工艺制作相当困难。
This paper introduces the principle and the design of the double gate gate-ban system of defending to rob by tailing behind.系统地介绍了适合小型银行储蓄所、现金柜台等重要金融场所防尾随抢劫双门门禁系统的原理与设计。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。