高掺
高掺
电极接触孔处采用重掺杂,减小接触电导损失。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.本文通过对不同掺杂浓度的样品进行刻蚀,发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。